Factory Lead Time  

18 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

130A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

210W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

Automotive, AEC-Q101

Published  

2016

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

HIGH RELIABILITY

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

JESD-30 Code  

R-PSFM-T3

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

8m Ω @ 20A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2596pF @ 30V

Gate Charge (Qg) (Max) @ Vgs  

21nC @ 10V

Drain to Source Voltage (Vdss)  

60V

Vgs (Max)  

20V

Continuous Drain Current (ID)  

130A

JEDEC-95 Code  

TO-220AB

Drain-source On Resistance-Max  

0.008Ohm

Pulsed Drain Current-Max (IDM)  

200A

DS Breakdown Voltage-Min  

60V

Avalanche Energy Rating (Eas)  

190 mJ

REACH SVHC  

not_compliant

RoHS Status  

ROHS3 Compliant